Cs2ZnGe3Te8
Type: Volume Composition show more
ObjectId: 3459 ExternalId: 2129
Created: 2/1/2023 3:33:11 PM by Vic) Dudarev Victor [vic_dudarev@mail.ru]
Access: Public Sort Code (asc): 0
Description: Cs2ZnGe3Te8
[no file attached]
: Cs-Ge-Te-Zn
Composition
| Element | Absolute | Percentage | |
|---|---|---|---|
| Cs | 2 | 14.286 % | |
| Zn | 1 | 7.143 % | |
| Ge | 3 | 21.429 % | |
| Te | 8 | 57.143 % |
Associated Objects
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Morris C.D.,Li H.,Jin H.,Malliakas C.D.,Peters J.A.,Trikalitis P.N.,Fr
Literature ReferenceMorris C.D.,Li H.,Jin H.,Malliakas C.D.,Peters J.A.,Trikalitis P.N.,Freeman A.J.,Wessels B.W.,Kanatzidis M.G. Cs2MIIMIV3Q8 (Q = S, Se, Te): An Extensive Family of Layered Semiconductors with Diverse Band Gaps
All properties (except table)
No properties found
The table
| CrystalSystem | SpaceGroup | Eg | IsCalculated | ReferenceId | Comment |
|---|---|---|---|---|---|
| Orthorhombic | P212121 | 1.07 | 0 | 458 | UV-vis diffuse reflectance spectroscopy |