In8S2.82Te6.18(Te2)3
Type: Volume Composition show more
ObjectId: 6546 ExternalId: 5651
Created: 2/1/2023 3:33:28 PM by Vic) Dudarev Victor [vic_dudarev@mail.ru]
Access: Public Sort Code (asc): 0
Description: In8S2.82Te6.18(Te2)3
[no file attached]
: In-S-Te
Composition
| Element | Absolute | Percentage | |
|---|---|---|---|
| In | 8 | 34.783 % | |
| S | 2.82 | 12.261 % | |
| Te | 12.18 | 52.957 % |
Associated Objects
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McClain R.,Laing C.C.,Shen J.,Wolverton C.,Kanatzidis M.G. Mixed Anion
Literature ReferenceMcClain R.,Laing C.C.,Shen J.,Wolverton C.,Kanatzidis M.G. Mixed Anion Semiconductor In8S2.82Te6.18(Te2)3
All properties (except table)
No properties found
The table
| CrystalSystem | SpaceGroup | Eg | IsCalculated | ReferenceId | Comment |
|---|---|---|---|---|---|
| Monoclinic | C2/c | 0.99 | 1 | 1818 | Indirect. Calculation. VASP |
| Monoclinic | C2/c | 1.12 | 0 | 1818 | Optical |