RbGaGeS4
Type: Volume Composition show more
ObjectId: 6121 ExternalId: 5187
Created: 2/1/2023 3:33:25 PM by Vic) Dudarev Victor [vic_dudarev@mail.ru]
Access: Public Sort Code (asc): 0
Description: RbGaGeS4
[no file attached]
: Ga-Ge-Rb-S
Composition
| Element | Absolute | Percentage | |
|---|---|---|---|
| Rb | 1 | 14.286 % | |
| Ga | 1 | 14.286 % | |
| Ge | 1 | 14.286 % | |
| S | 4 | 57.143 % |
Associated Objects
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Friedrich D.,Byun H.R.,Hao S.,Patel S.,Wolverton C.,Jang J.I.,Kanatzid
Literature ReferenceFriedrich D.,Byun H.R.,Hao S.,Patel S.,Wolverton C.,Jang J.I.,Kanatzidis M.G. Layered and Cubic Semiconductors AGaM'Q4 (A+ = K+, Rb+, Cs+, Tl+; M'4+ = Ge4+, Sn4+; Q2- = S2-, Se2-) and High Third-Harmonic Generation
All properties (except table)
No properties found
The table
| CrystalSystem | SpaceGroup | Temperature | Eg | IsCalculated | ReferenceId | Comment |
|---|---|---|---|---|---|---|
| Orthorhombic | Pnma | 298 | 3.26 | 0 | 1582 | UV-vis diffuse reflectance spectroscopy |