Sn2BiS2I3
Type: Volume Composition show more
ObjectId: 3913 ExternalId: 2759
Created: 2/1/2023 3:33:13 PM by Vic) Dudarev Victor [vic_dudarev@mail.ru]
Access: Public Sort Code (asc): 0
Description: Sn2BiS2I3
[no file attached]
: Bi-I-S-Sn
Composition
| Element | Absolute | Percentage | |
|---|---|---|---|
| Sn | 2 | 25 % | |
| Bi | 1 | 12.5 % | |
| S | 2 | 25 % | |
| I | 3 | 37.5 % |
Associated Objects
-
Islam S.M.,Malliakas C.D.,Sarma D.,Maloney D.C.,Stoumpos C.C.,Kontsevo
Literature ReferenceIslam S.M.,Malliakas C.D.,Sarma D.,Maloney D.C.,Stoumpos C.C.,Kontsevoi O.Y.,Freeman A.J.,Kanatzidis M.G. Direct Gap Semiconductors Pb2BiS2I3, Sn2BiS2I3, and Sn2BiSI5
All properties (except table)
No properties found
The table
| CrystalSystem | SpaceGroup | Eg | IsCalculated | ReferenceId | Comment |
|---|---|---|---|---|---|
| Orthorhombic | Cmcm | 0.9 | 1 | 724 | Direct. Calculation. VASP |
| Orthorhombic | Cmcm | 1.22 | 0 | 724 | UV–vis diffuse absorbance spectroscopy |