Zhang S.,Mei D.,Du X.,Lin Z.,Zhong J.,Wu Y.,Xu J. The structure and ba

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Created: 2/1/2023 3:32:32 PM by Vic) Dudarev Victor [vic_dudarev@mail.ru]

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Description: Zhang S.,Mei D.,Du X.,Lin Z.,Zhong J.,Wu Y.,Xu J. The structure and band gap design of high Si doping level AgGa1-xGa1-xSixSe2 (x = 1/2)

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Authors list (comma-separated): Zhang S.,Mei D.,Du X.,Lin Z.,Zhong J.,Wu Y.,Xu J.

Title: The structure and band gap design of high Si doping level AgGa1-xGa1-xSixSe2 (x = 1/2)

Journal: J.Solid State Chem.

Year: 2016

Volume: v.238

Number (issue):

Start Page: p.21

End Page: 24

DOI: 10.1016/j.jssc.2016.03.006

URL:

BibTeX :

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