Al2Te3
Type: Volume Composition show more
ObjectId: 4483 ExternalId: 3392
Created: 2/1/2023 3:33:15 PM by Vic) Dudarev Victor [vic_dudarev@mail.ru]
Access: Public Sort Code (asc): 0
Description: Al2Te3
[no file attached]
: Al-Te
Composition
| Element | Absolute | Percentage | |
|---|---|---|---|
| Al | 2 | 40 % | |
| Te | 3 | 60 % |
Associated Objects
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Abrikosov N.Ch.,Bankina V.F.,Porezkaya L.V.,Skudnova E.V.,Chizhevskaya
Literature ReferenceAbrikosov N.Ch.,Bankina V.F.,Porezkaya L.V.,Skudnova E.V.,Chizhevskaya S.N. Semiconducting Chalcogenides and Their Alloys. Nauka, Moscow
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Crystal Chemical, Physical-Chemical and Physical Properties of Semicon
Literature ReferenceCrystal Chemical, Physical-Chemical and Physical Properties of Semiconducting Substances. Handbook. Standard Publ., Moscow
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Gavrilenko V.I.,Grekhov A.M.,Korbutyak D.V.,Litovchenko V.G. Optical P
Literature ReferenceGavrilenko V.I.,Grekhov A.M.,Korbutyak D.V.,Litovchenko V.G. Optical Properties of Semiconductors. Handbook. Naukova Dumka, Kiev
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Physical Properties. Handbook. Ed. By I.S.Grigor'ev&E.Z.Meilikhov. Mos
Literature ReferencePhysical Properties. Handbook. Ed. By I.S.Grigor'ev&E.Z.Meilikhov. Moscow, Energoatomizdat
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Physical-Chemical Properties of Semiconducting Substances. Moscow, Nau
Literature ReferencePhysical-Chemical Properties of Semiconducting Substances. Moscow, Nauka
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Strehlow W.H.,Cook E.L. Compilation of Energy Band Gaps in Elemental a
Literature ReferenceStrehlow W.H.,Cook E.L. Compilation of Energy Band Gaps in Elemental and Binary Compound Semiconductors and Insulators
All properties (except table)
No properties found
The table
| Modification | CrystalSystem | StructureType | SpaceGroup | Eg | IsCalculated | ReferenceId | Temperature | Comment |
|---|---|---|---|---|---|---|---|---|
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.3 | 0 | 30 | ||
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.5 | 0 | 37 | 0 | |
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.2 | 0 | 27 | 300 | |
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.2 | 0 | 30 | 300 | |
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.2 | 0 | 36 | 300 | |
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.2 | 0 | 37 | 300 | |
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.2 | 0 | 40 | 300 | |
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.5 | 0 | 27 | 300 | |
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.5 | 0 | 36 | 300 | |
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.5 | 0 | 37 | 300 | |
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.5 | 0 | 40 | 300 | |
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.5 | 0 | 581 | 300 | Optical absorption spectroscopy |
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.5 | 0 | 581 | 300 | Thermal activation |
| α (KII) | Cubic | γ-Ga2S3 | F43(-)m | 2.2 | 0 | 581 | 800 | Thermal activation |