EuGa2S4
Type: Volume Composition show more
ObjectId: 2537 ExternalId: 1121
Created: 2/1/2023 3:33:09 PM by Vic) Dudarev Victor [vic_dudarev@mail.ru]
Access: Public Sort Code (asc): 0
Description: EuGa2S4
[no file attached]
: Eu-Ga-S
Composition
| Element | Absolute | Percentage | |
|---|---|---|---|
| Eu | 1 | 14.286 % | |
| Ga | 2 | 28.571 % | |
| S | 4 | 57.143 % |
Associated Objects
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Chi Y.,Guo S.-P.,Xue H.-G. Band gap tuning from an indirect EuGa2S4 to
Literature ReferenceChi Y.,Guo S.-P.,Xue H.-G. Band gap tuning from an indirect EuGa2S4 to a direct EuZnGeS4 semiconductor: syntheses, crystal and electronic structures, and optical properties
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Rare-Earth Compounds. Molybdates, Tungstates. Nauka, Moscow
Literature ReferenceRare-Earth Compounds. Molybdates, Tungstates. Nauka, Moscow
All properties (except table)
No properties found
The table
| Eg | IsCalculated | ReferenceId | CrystalSystem | StructureType | SpaceGroup | Comment | Temperature |
|---|---|---|---|---|---|---|---|
| 2.25 | 0 | 42 | |||||
| 2.69 | 1 | 1196 | Orthorhombic | PbGa2Se4 | Fddd | Calculation. Material Studio | |
| 2.32 | 0 | 1196 | Orthorhombic | PbGa2Se4 | Fddd | UV-vis-NIR diffuse reflectance spectroscopy | 298 |