Chi Y.,Guo S.-P.,Xue H.-G. Band gap tuning from an indirect EuGa2S4 to
Type: Literature Reference show more
ObjectId: 1196 ExternalId: 1170
Created: 2/1/2023 3:32:33 PM by Vic) Dudarev Victor [vic_dudarev@mail.ru]
Access: Public Sort Code (asc): 0
Description: Chi Y.,Guo S.-P.,Xue H.-G. Band gap tuning from an indirect EuGa2S4 to a direct EuZnGeS4 semiconductor: syntheses, crystal and electronic structures, and optical properties
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InfProject.Models.Reference - generic form start
ReferenceId: 1196
Authors list (comma-separated): Chi Y.,Guo S.-P.,Xue H.-G.
Title: Band gap tuning from an indirect EuGa2S4 to a direct EuZnGeS4 semiconductor: syntheses, crystal and electronic structures, and optical properties
Journal: RSC Adv.
Year: 2017
Volume: v.7
Number (issue): N.9
Start Page: p.5039
End Page: 5045
DOI: 10.1039/C6RA25283D
URL:
BibTeX :
InfProject.Models.Reference - generic form end
Referenced Objects (Reverse Association)
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EuGa2S4
Volume CompositionEuGa2S4
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EuIn2S4
Volume CompositionEuIn2S4
-
EuZnGeS4
Volume CompositionEuZnGeS4
All properties (except table)
No properties found