EuZnGeS4
Type: Volume Composition show more
ObjectId: 5509 ExternalId: 4472
Created: 2/1/2023 3:33:21 PM by Vic) Dudarev Victor [vic_dudarev@mail.ru]
Access: Public Sort Code (asc): 0
Description: EuZnGeS4
[no file attached]
: Eu-Ge-S-Zn
Composition
| Element | Absolute | Percentage | |
|---|---|---|---|
| Eu | 1 | 14.286 % | |
| Zn | 1 | 14.286 % | |
| Ge | 1 | 14.286 % | |
| S | 4 | 57.143 % |
Associated Objects
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Chi Y.,Guo S.-P.,Xue H.-G. Band gap tuning from an indirect EuGa2S4 to
Literature ReferenceChi Y.,Guo S.-P.,Xue H.-G. Band gap tuning from an indirect EuGa2S4 to a direct EuZnGeS4 semiconductor: syntheses, crystal and electronic structures, and optical properties
All properties (except table)
No properties found
The table
| CrystalSystem | StructureType | SpaceGroup | Eg | IsCalculated | ReferenceId | Comment | Temperature |
|---|---|---|---|---|---|---|---|
| Orthorhombic | PbGa2Se4 | Fddd | 1.32 | 1 | 1196 | Calculation. Material Studio | |
| Orthorhombic | PbGa2Se4 | Fddd | 2.26 | 0 | 1196 | UV-vis-NIR diffuse reflectance spectroscopy | 298 |